{"@context":"https://neupai.io/schema/v0.2","@type":"StructuredNewsArticle","identity":{"article_id":"samsung_news_20260805_samsung-fms-2026-3d-memory","canonical_url":"https://news.samsung.com/kr/%ec%82%bc%ec%84%b1%ec%a0%84%ec%9e%90-fms-2026%ec%84%9c-%ec%b0%a8%ec%84%b8%eb%8c%80-3d-%eb%a9%94%eb%aa%a8%eb%a6%ac-%eb%b9%84%ec%a0%84-%ec%a0%9c%ec%8b%9c","ai_url":null,"publisher":{"name":"삼성전자 뉴스룸","domain":"news.samsung.com","type":"online"},"author":"삼성전자 뉴스룸","published_at":"2026-08-05T04:30:00.000Z","updated_at":null,"language":"ko","article_type":"press_release_based","originality":"press_release_rewrite"},"content":{"headline":"삼성전자, FMS 2026서 차세대 3D 메모리 비전 제시","summary":"삼성전자가 FMS 2026에서 차세대 3D 메모리 아키텍처인 zHBM과 zNAND-O 목업을 업계 최초로 공개했다. 또한 400단 이상의 V10 BV-NAND를 선보이며 차세대 AI 메모리 기술 리더십을 강화하겠다고 밝혔다.","topics":["반도체","메모리","AI","삼성전자","기술 발표"],"geography":["KR","US"],"entities":[{"name":"삼성전자","canonical_id":"corp:kr:samsung-electronics","type":"company","role_in_article":"primary_subject","metadata":{"ticker":"005930.KS","parent":null}},{"name":"이진엽","canonical_id":"person:kr:lee-jin-yeop","type":"person","role_in_article":"quoted","metadata":{"parent":"corp:kr:samsung-electronics"}},{"name":"김경륜","canonical_id":"person:kr:kim-gyeong-ryun","type":"person","role_in_article":"quoted","metadata":{"parent":"corp:kr:samsung-electronics"}},{"name":"zHBM","canonical_id":"product:kr:zhbm","type":"product","role_in_article":"mentioned","metadata":{"parent":"corp:kr:samsung-electronics"}},{"name":"zNAND-O","canonical_id":"product:kr:znand-o","type":"product","role_in_article":"mentioned","metadata":{"parent":"corp:kr:samsung-electronics"}},{"name":"V10 BV-NAND","canonical_id":"product:kr:v10-bv-nand","type":"product","role_in_article":"mentioned","metadata":{"parent":"corp:kr:samsung-electronics"}},{"name":"HBM4","canonical_id":"product:kr:hbm4","type":"product","role_in_article":"mentioned","metadata":{"parent":"corp:kr:samsung-electronics"}},{"name":"HBM4E","canonical_id":"product:kr:hbm4e","type":"product","role_in_article":"mentioned","metadata":{"parent":"corp:kr:samsung-electronics"}},{"name":"HBM5","canonical_id":"product:kr:hbm5","type":"product","role_in_article":"mentioned","metadata":{"parent":"corp:kr:samsung-electronics"}},{"name":"LPDDR5X-PIM","canonical_id":"product:kr:lpddr5x-pim","type":"product","role_in_article":"mentioned","metadata":{"parent":"corp:kr:samsung-electronics"}},{"name":"PM1763","canonical_id":"product:kr:pm1763","type":"product","role_in_article":"mentioned","metadata":{"parent":"corp:kr:samsung-electronics"}},{"name":"BM1773","canonical_id":"product:kr:bm1773","type":"product","role_in_article":"mentioned","metadata":{"parent":"corp:kr:samsung-electronics"}},{"name":"미국 캘리포니아주 산타클라라","canonical_id":"location:us:santa-clara-california","type":"location","role_in_article":"mentioned","metadata":{}}],"claims":[{"id":"c1","statement":"삼성전자가 FMS 2026에서 차세대 3D 메모리 아키텍처인 zHBM과 zNAND-O의 목업을 업계 최초로 공개했다","as_of":"2026-08","as_of_explicit":false,"as_of_raw":"FMS 2026","source_type":"company_disclosure","comparison":null,"type":"fact","figures":null,"expiry_hint":null,"insight":null},{"id":"c2","statement":"삼성전자가 FMS 2026에서 약 20평 규모의 최대 전시 공간을 마련했다","as_of":"2026-08","as_of_explicit":false,"as_of_raw":"FMS 2026","source_type":"company_disclosure","comparison":null,"type":"fact","figures":{"value":20,"unit":"pyeong","approximate":true,"converted":null},"expiry_hint":null,"insight":null},{"id":"c3","statement":"삼성전자가 FMS 2026에서 약 30개 제품을 전시했다","as_of":"2026-08","as_of_explicit":false,"as_of_raw":"FMS 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제공한다","as_of":"2026","as_of_explicit":false,"as_of_raw":"2026년","source_type":"company_plan","comparison":"HBM5","type":"estimate","figures":{"value":8,"unit":"times","approximate":false,"converted":null},"expiry_hint":null,"insight":null},{"id":"c7","statement":"zHBM은 HBM5 대비 전성비를 최대 3배 향상시킨다","as_of":"2026","as_of_explicit":false,"as_of_raw":"2026년","source_type":"company_plan","comparison":"HBM5","type":"estimate","figures":{"value":3,"unit":"times","approximate":false,"converted":null},"expiry_hint":null,"insight":null},{"id":"c8","statement":"zHBM은 HBM5 대비 열 저항을 절반 이상 낮춘다","as_of":"2026","as_of_explicit":false,"as_of_raw":"2026년","source_type":"company_plan","comparison":"HBM5","type":"estimate","figures":{"value":0.5,"unit":"ratio","approximate":false,"converted":null},"expiry_hint":null,"insight":null},{"id":"c9","statement":"zNAND-O는 4단 또는 8단 반도체 칩을 3D 패키징한 제품이다","as_of":"2026","as_of_explicit":false,"as_of_raw":"2026년","source_type":"company_disclosure","comparison":null,"type":"fact","figures":{"value":4,"unit":"chips","approximate":false,"converted":null},"expiry_hint":null,"insight":null},{"id":"c10","statement":"V10 BV-NAND는 메모리 집적도를 전 세대(V9) 대비 약 58% 향상시켰다","as_of":"2026","as_of_explicit":false,"as_of_raw":"2026년","source_type":"company_disclosure","comparison":"previous_generation","type":"fact","figures":{"value":58,"unit":"%","approximate":true,"converted":null},"expiry_hint":null,"insight":null},{"id":"c11","statement":"삼성전자가 지난 2월 업계 최초로 HBM4를 양산 출하했다","as_of":"2026-02","as_of_explicit":true,"as_of_raw":"지난 2월","source_type":"company_disclosure","comparison":null,"type":"fact","figures":null,"expiry_hint":null,"insight":null},{"id":"c12","statement":"삼성전자가 5월 업계 최대 성능, 최고 용량의 HBM4E 샘플을 세계 최초로 고객사에 공급했다","as_of":"2026-05","as_of_explicit":true,"as_of_raw":"5월","source_type":"company_disclosure","comparison":null,"type":"fact","figures":null,"expiry_hint":null,"insight":null},{"id":"c13","statement":"삼성전자가 LPDDR5X-PIM을 세계 최초로 개발했다","as_of":"2026","as_of_explicit":false,"as_of_raw":"2026년","source_type":"company_disclosure","comparison":null,"type":"fact","figures":null,"expiry_hint":null,"insight":null},{"id":"c14","statement":"삼성전자가 13년 전 같은 행사에서 세계 최초로 V-NAND 기술을 발표했다","as_of":"2013","as_of_explicit":true,"as_of_raw":"13년 전","source_type":"company_disclosure","comparison":null,"type":"fact","figures":null,"expiry_hint":null,"insight":null}],"ai_emotional_context":{"valence":0.6,"arousal":0.5,"primary_emotions":[{"emotion":"optimistic","intensity":0.7},{"emotion":"excited","intensity":0.5}],"secondary_emotions":[{"emotion":"calm","intensity":0.3}],"emotional_triggers":[{"claim_id":"c5","emotion":"excited","reason":"major_opportunity"},{"claim_id":"c6","emotion":"optimistic","reason":"significant_positive_metric"}]},"image":{"url":"https://onjblseywainslkhvkav.supabase.co/storage/v1/object/public/article-images/b19a7a5e-dfa5-4800-b87f-710b264be1b7.jpg","alt":"삼성전자가 개발한 반도체 메모리 칩의 앞면과 뒷면 모습, 뒷면에는 다수의 볼 그리드 어레이 단자가 배열돼 있다.","caption":null,"source":"first_img","alt_status":"auto"}},"provenance":{"source_chain":["press_release","samsung-electronics"],"original_source_url":null,"related_articles":[]},"temporal":{"freshness":"recent","next_update_expected":null},"access":{"license":"neupai_standard","attribution_required":true,"structured_data":"free","full_text_available":false,"full_text_access":null}}