{"@context":"https://neupai.io/schema/v0.2","@type":"StructuredNewsArticle","identity":{"article_id":"skhynixnews_20260722_research-inside-ep1-cti-176layer-3dnand","canonical_url":"https://news.skhynix.co.kr/research-inside-ep1/","ai_url":null,"publisher":{"name":"SK하이닉스 뉴스룸","domain":"news.skhynix.co.kr","type":"online"},"author":"SK하이닉스","published_at":"2026-07-22T04:59:25.000Z","updated_at":null,"language":"en","article_type":"feature","originality":"self_produced"},"content":{"headline":"[Research Inside] Targeting High-Performance Ultra-High-Layer 3D NAND… CTI Innovation Expands from Research to Mass Production","summary":"SK hynix has become the world's first to apply new CTI (Charge Trap Nitride Isolation) technology to mass production of 176-layer 3D NAND flash, reducing cell interference by more than 30% and improving data retention capability by more than 45%. The research results were presented at 2025 IEDM, with TL Jin Sang-wan leading the related research.","topics":["semiconductors","nand flash","memory technology","r&d"],"geography":["KR"],"entities":[{"name":"SK hynix","canonical_id":"corp:kr:sk-hynix","type":"company","role_in_article":"primary_subject","metadata":{"ticker":"000660.KS","parent":null}},{"name":"Jin Sang-wan","canonical_id":"person:kr:jin-sang-wan","type":"person","role_in_article":"quoted","metadata":{"ticker":null,"parent":null}},{"name":"IEEE International Electron Devices Meeting","canonical_id":"org:us:ieee-iedm","type":"organization","role_in_article":"source","metadata":{"ticker":null,"parent":null}}],"claims":[{"id":"c1","statement":"SK hynix successfully applied CTI structure to mass-produced 176-layer NAND for the first time in the world, reducing cell interference by more than 30%","as_of":"2025-12","as_of_explicit":false,"as_of_raw":"December 2025","source_type":"research_paper","comparison":"existing_cti_baseline","type":"fact","figures":{"value":30,"unit":"%","approximate":false,"converted":null},"expiry_hint":null,"insight":null},{"id":"c2","statement":"SK hynix successfully applied CTI structure to mass-produced 176-layer NAND for the first time in the world, boosting data retention capability by more than 45%","as_of":"2025-12","as_of_explicit":false,"as_of_raw":"December 2025","source_type":"research_paper","comparison":"existing_cti_baseline","type":"fact","figures":{"value":45,"unit":"%","approximate":false,"converted":null},"expiry_hint":null,"insight":null},{"id":"c3","statement":"This research highlights technology that overcomes the limits of miniaturization in ultra-high-layer 3D NAND stacking environments of 176 layers or more","as_of":"2025-12","as_of_explicit":false,"as_of_raw":"December 2025","source_type":"research_paper","comparison":null,"type":"fact","figures":{"value":176,"unit":"layers","approximate":false,"converted":null},"expiry_hint":null,"insight":null},{"id":"c4","statement":"This paper was published at the 2025 IEEE International Electron Devices Meeting (IEDM)","as_of":"2025","as_of_explicit":true,"as_of_raw":"2025 IEEE International Electron Devices Meeting (IEDM)","source_type":"research_paper","comparison":null,"type":"fact","figures":null,"expiry_hint":null,"insight":null},{"id":"c5","statement":"3D NAND is formed by stacking these cells in layers of 100, 200, 300, and so on","as_of":"2026-07","as_of_explicit":false,"as_of_raw":"July 2026","source_type":"journalist_analysis","comparison":null,"type":"fact","figures":{"value":300,"unit":"layers","approximate":false,"converted":null},"expiry_hint":null,"insight":null},{"id":"c6","statement":"The research achieved uniform characteristic distribution across all 176 layers, solving the existing problem of uneven processes and proving mass production viability","as_of":"2025-12","as_of_explicit":false,"as_of_raw":"December 2025","source_type":"research_paper","comparison":null,"type":"fact","figures":{"value":176,"unit":"layers","approximate":false,"converted":null},"expiry_hint":null,"insight":null},{"id":"c7","statement":"Existing CTI had only been tested at around the 10-layer level","as_of":"2025-12","as_of_explicit":false,"as_of_raw":"December 2025","source_type":"journalist_analysis","comparison":null,"type":"fact","figures":{"value":10,"unit":"layers","approximate":false,"converted":null},"expiry_hint":null,"insight":null},{"id":"c8","statement":"It became possible to reduce unit cell size by more than 10% to increase NAND integration density, without concerns about threshold voltage distortion or electron migration errors","as_of":"2025-12","as_of_explicit":false,"as_of_raw":"December 2025","source_type":"research_paper","comparison":null,"type":"fact","figures":{"value":10,"unit":"%","approximate":false,"converted":null},"expiry_hint":null,"insight":null},{"id":"c9","statement":"The company evaluates this technology as a 'core technology' that will overcome the limits of vertical stacking miniaturization","as_of":"2026-07","as_of_explicit":false,"as_of_raw":"July 2026","source_type":"company_disclosure","comparison":null,"type":"opinion","figures":null,"expiry_hint":null,"insight":{"analyst_name":null,"analyst_affiliation":"SK하이닉스","confidence":"high","forecast_horizon":"long_term","sentiment":"bullish","reasoning":"Since CTI technology was verified through mass production application at 176 layers, solving cell interference and data retention issues, it is evaluated as a core technology for overcoming future vertical stacking miniaturization limits"}},{"id":"c10","statement":"TL Jin Sang-wan stated that this was meaningful research as it presented new possibilities for miniaturization technology that had been considered stagnant","as_of":"2026-07","as_of_explicit":false,"as_of_raw":"July 2026","source_type":"company_disclosure","comparison":null,"type":"opinion","figures":null,"expiry_hint":null,"insight":{"analyst_name":"진상완","analyst_affiliation":"SK하이닉스","confidence":"medium","forecast_horizon":null,"sentiment":"bullish","reasoning":"The researcher's own assessment that new CTI technology presented new possibilities in a field of miniaturization technology considered stagnant"}},{"id":"c11","statement":"TL Jin Sang-wan stated that while existing CTI research had only reached the proof-of-concept stage, this research was a highly challenging task that expanded it to actual mass production scale","as_of":"2026-07","as_of_explicit":false,"as_of_raw":"July 2026","source_type":"company_disclosure","comparison":null,"type":"opinion","figures":null,"expiry_hint":null,"insight":{"analyst_name":"진상완","analyst_affiliation":"SK하이닉스","confidence":"medium","forecast_horizon":null,"sentiment":"bullish","reasoning":"Basis that through multifaceted analysis and simulation verification by the collaborative team, technological limits were overcome and expanded to mass production scale"}}],"ai_emotional_context":{"valence":0.4,"arousal":0.35,"primary_emotions":[{"emotion":"optimistic","intensity":0.5},{"emotion":"hopeful","intensity":0.4}],"secondary_emotions":[{"emotion":"calm","intensity":0.3}],"emotional_triggers":[{"claim_id":"c1","emotion":"optimistic","reason":"significant_positive_metric"},{"claim_id":"c2","emotion":"optimistic","reason":"significant_positive_metric"}]},"image":{"url":"https://onjblseywainslkhvkav.supabase.co/storage/v1/object/public/article-images/eecaae5a-7ba2-4e63-95d5-61c48f76d5d0.jpg","alt":"웨이퍼 적층부터 채널 홀 형성, CTN·산화막 증착, 셀 완성까지 낸드플래시 셀 형성 4단계 과정을 도식화한 그림.","caption":null,"source":"first_img","alt_status":"auto"}},"provenance":{"source_chain":["primary_reporting","sk-hynix"],"original_source_url":null,"related_articles":[]},"temporal":{"freshness":"recent","next_update_expected":null},"access":{"license":"neupai_standard","attribution_required":true,"structured_data":"free","full_text_available":false,"full_text_access":null}}